Researchers have investigated the crystalline morphology such as lattice plane curvature and lattice plane tilting in (20–21) GaN films on (22–43) patterned sapphire substrates (PSS) by using X-ray rocking curve (XRC) measurements.
From the results of asymmetric XRC for the GaN (20–22) and (12–31) diffractions, it is found that lattice plane tilting is highly dependent on the film thickness and the growth condition. The C-plane-suppressed growth process with tuning the V/III ratio for the (20–21) GaN films on the (22–43) PSS is very effective to suppress the generation of basal plane stacking faults as confirmed by TEM analysis.
| Item | 2-inch V-plane(22-43) 430μm Sapphire Wafers | |
| Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
| Grade | Prime, Epi-Ready | |
| Surface Orientation | V-plane(22-43) | |
| Diameter | 50.8 mm +/- 0.1 mm | |
| Thickness | 430 μm +/- 25 μm | |
| Primary Flat Orientation | A-plane(11-20) +/- 0.2° | |
| Primary Flat Length | 16.0 mm +/- 1.0 mm | |
| Single Side Polished | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
| (SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
| Double Side Polished | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
| (DSP) | Back Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
| TTV | < 10 μm | |
| BOW | < 10 μm | |
| WARP | < 10 μm | |
| Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
| 25 pieces in one cassette packaging or single piece packaging. | ||
Note: Custom sapphire wafers with any orientation and thickness can be provided.
Introduction to the Manufacturing Process of Sapphire Ingot
Company brochure
The Technical Difference Between the Kyropoulos Method and the Czochralski Method for Growing Sapphire Crystals
