Due to its application prospects in solar-blind ultraviolet detection, MgZnO alloy semiconductor films with suitable band gaps have attracted more and more attention. A series of MgxZn1-xO thin films with different compositions were prepared on M plane sapphire wafers by using low-pressure metalorganic chemical vapor deposition (LP-MOCVD).
CRYSCORE provides M-plane (10-10) sapphire wafers with excellent surface quality. The roughness on the epi-polished side is lower than 0.5 nm.
No matter you are looking for double or single side polished sapphire wafers, contact us and we'll suggest the choicest one for your business.
Item | 2-inch M-plane(10-10) 430μm Sapphire Wafers | |
Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
Grade | Prime, Epi-Ready | |
Surface Orientation | M-plane(10-10) | |
Diameter | 50.8 mm +/- 0.1 mm | |
Thickness | 430 μm +/- 25 μm | |
Primary Flat Orientation | C-plane(0001) +/- 0.2° | |
Primary Flat Length | 16.0 mm +/- 1.0 mm | |
Single Side Polished (SSP) | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm | |
Double Side Polished (DSP) | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
Back Surface | Epi-polished, Ra < 0.5 nm (by AFM) | |
TTV | < 10 μm | |
BOW | < 10 μm | |
WARP | < 10 μm | |
Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, 25 pieces in one cassette packaging or single piece packaging. | |
Note: Custom sapphire wafers with any orientation and any thickness can be provided.
Our sapphire wafer cost you less and help you to achieve more, contact us to get more information.
Introduction to the Manufacturing Process of Sapphire Ingot
Company brochure
The Technical Difference Between the Kyropoulos Method and the Czochralski Method for Growing Sapphire Crystals
