A plane(11-20) sapphire wafers have a uniform dielectric constant and highly insulating characteristic, so they are generally used for hybrid microelectronic applications. This orientation can also be used for the growth of high superconductors.
For example, TlBaCaCuO (TbBaCaCuO), Tl-2212, the hetero-epitaxial superconducting thin film is grown on a sapphire cerium oxide (CeO2) composite substrate. The availability of Angstrom level surface finishes allows for fine line interconnects of hybrid modules.
| Item | 2-inch A-plane(11-20) 430μm Sapphire Wafers | |
| Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
| Grade | Prime, Epi-Ready | |
| Surface Orientation | A-plane(11-20) | |
| Diameter | 50.8 mm +/- 0.1 mm | |
| Thickness | 430 μm +/- 25 μm | |
| Primary Flat Orientation | C-plane(0001) +/- 0.2° | |
| Primary Flat Length | 16.0 mm +/- 1.0 mm | |
| Single Side Polished | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
| (SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
| Double Side Polished | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
| (DSP) | Back Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
| TTV | < 10 μm | |
| BOW | < 10 μm | |
| WARP | < 10 μm | |
| Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
| 25 pieces in one cassette packaging or single piece packaging. | ||
Note: Custom sapphire wafers and substrates with any orientation and any thickness can be provided.
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Introduction to the Manufacturing Process of Sapphire Ingot
Company brochure
The Technical Difference Between the Kyropoulos Method and the Czochralski Method for Growing Sapphire Crystals
