Based on the continuous upgrade of sapphire technology and the rapid expansion of the application market, 4 inch and 6 inch substrate wafers will be more adopted by mainstream chip companies due to their inherent advantages in production utilization.
CRYSCORE supplies a wide range of sapphire wafers either from stock or custom made to your specification for various applications. The Epi-Ready grade sapphire wafers have no particles, no cracks or pores, no scratches, or other defects. All the wafers and sapphire substrates are traceable with respect to the cassette numbers marked on the label.
| Item | 6-inch C-plane(0001) 1300μm Sapphire Wafers | |
| Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
| Grade | Prime, Epi-Ready | |
| Surface Orientation | C-plane(0001) | |
| C-plane off-angle toward M-axis 0.2 +/- 0.1° | ||
| Diameter | 150.0 mm +/- 0.2 mm | |
| Thickness | 1300 μm +/- 25 μm | |
| Primary Flat Orientation | A-plane(11-20) +/- 0.2° | |
| Primary Flat Length | 47.0 mm +/- 1.0 mm | |
| Single Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| (SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
| Double Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| (DSP) | Back Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| TTV | < 25 μm | |
| BOW | < 25 μm | |
| WARP | < 25 μm | |
| Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
| 25 pieces in one cassette packaging or single piece packaging. | ||
Note: Custom sapphire wafers with any orientation and any thickness can be provided.
Introduction to the Manufacturing Process of Sapphire Ingot
Company brochure
The Technical Difference Between the Kyropoulos Method and the Czochralski Method for Growing Sapphire Crystals
