Sapphire is an important material used widely in the growth of III-nitride epitaxial layers (GaN, AlN, InN, AlGaN, InGaN, InAlN, etc.) and electronics applications. For these applications, the surface roughness of the sapphire substrate is the key factor that influences its performance.
CRYSCORE provides the customers with high surface quality sapphire wafers at a low cost. The roughness is less than 0.2 nm (by AFM) for C-plane (0001) sapphire wafers, and less than 0.5 nm (by AFM) for custom orientations.
| Item | 3-inch C-plane(0001) 500μm Sapphire Wafers | |
| Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
| Grade | Prime, Epi-Ready | |
| Surface Orientation | C-plane(0001) | |
| C-plane off-angle toward M-axis 0.2 +/- 0.1° | ||
| Diameter | 76.2 mm +/- 0.1 mm | |
| Thickness | 500 μm +/- 25 μm | |
| Primary Flat Orientation | A-plane(11-20) +/- 0.2° | |
| Primary Flat Length | 22.0 mm +/- 1.0 mm | |
| Single Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| (SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
| Double Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| (DSP) | Back Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| TTV | < 15 μm | |
| BOW | < 15 μm | |
| WARP | < 15 μm | |
| Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
| 25 pieces in one cassette packaging or single piece packaging. | ||
Note: Custom sapphire wafers with any orientation and any thickness can be provided.
Introduction to the Manufacturing Process of Sapphire Ingot
Company brochure
The Technical Difference Between the Kyropoulos Method and the Czochralski Method for Growing Sapphire Crystals
