After over 12 years of extensive experience, CRYSCORE can produce high-quality sapphire wafers in all orientations with unpolished and polished sides. The final thickness of sapphire wafers can be reduced by polishing, to get the required value, better TTV, and improved surface roughness.
Orientation offsets and flats are available upon request. For 1-inch C-plane (0001) sapphire wafers, generally, we provide no orientation flat.
Neither you are looking for single side or double side polished sapphire wafers, you can find the right one at CRYSCORE.
| Item | 1-inch C-plane(0001) 430μm Sapphire Wafers | |
| Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
| Grade | Prime, Epi-Ready | |
| Surface Orientation | C-plane(0001) | |
| C-plane off-angle toward M-axis 0.2 +/- 0.1° | ||
| Diameter | 25.4 mm +/- 0.1 mm | |
| Thickness | 430 μm +/- 25 μm | |
| Single Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| (SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
| Double Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| (DSP) | Back Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| TTV | < 5 μm | |
| BOW | < 5 μm | |
| WARP | < 5 μm | |
| Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
| 25 pieces in one cassette packaging or single piece packaging. | ||
Note: Custom sapphire wafers with any orientation and any thickness can be provided.
Introduction to the Manufacturing Process of Sapphire Ingot
Company brochure
The Technical Difference Between the Kyropoulos Method and the Czochralski Method for Growing Sapphire Crystals
