Besides the circle sapphire wafers, square and rectangle wafers are also available. We have supplied sapphire wafers with various sizes, 5mm x 5mm, 10mm x 10mm, 10mm x 15mm, 15mm x 20mm, etc. All the wafers are polished to an extremely smooth damage-free surface on one side or two sides so they have very good performance in GaN epitaxial growth by epitaxial manufacturers and researchers.
So far, C-plane (0001) is the orientation commonly used, for the mature technology of sapphire crystal growth along the C-axis, lower cost, steady physical, and chemical properties. CRYSCORE can also supply other orientations such as A-plane(11-20), M-plane(10-10), R-plane(1-102), N-plane(11-23), V-plane(22-43), etc.
Item | 10mm x 10mm R-plane 500μm sapphire wafer | |
Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
Grade | Prime, Epi-polished | |
Surface Orientation | R-plane(1-102) | |
Size | 10 mm +/- 0.05 mm x 10 mm +/- 0.05 mm | |
Thickness | 500 μm +/- 25 μm | |
Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) | Epi-polished, Ra < 0.5 nm (by AFM) |
Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm | Epi-polished, Ra < 0.5 nm (by AFM) |
TTV | < 5 μm | |
BOW | < 5 μm | |
WARP | < 5 μm | |
Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, single piece packaging. | |
Note: Custom sapphire wafers with any orientation and any thickness can be provided.
Reliable sapphire wafer suppliers like us have a professional and efficient team, and are always ready to help customers. Cooperate with CRYSCORE and let's make efforts together to promote your research project or to expand your production.
Introduction to the Manufacturing Process of Sapphire Ingot
Company brochure
The Technical Difference Between the Kyropoulos Method and the Czochralski Method for Growing Sapphire Crystals
